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In this work we have studied the influence of the Ar working pressure, substrate temperature, low power plasma irradiation and partial pressure of hydrogen in the RF-magnetron sputtering of indium tin oxide (ITO) thin films on glass substrates. This work aims at identifying the best conditions to achieve good quality ITO film at low temperature.
Four sets of samples were prepared which were characterized by scanning electron microscopy, X-ray diffraction (XRD), Van der Pauw, transmittance and absorbance measurements