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Influence of defects on photoluminescence from a Cu2ZnSnS4 thin film

dc.contributor.authorTeixeira, J. P.
dc.contributor.authorSousa, R. A.
dc.contributor.authorLeitão, J. P.
dc.contributor.authorSousa, M. G.
dc.contributor.authorCunha, A. F. da
dc.contributor.authorFernandes, P. A.
dc.contributor.authorSalomé, P. M. P.
dc.date.accessioned2019-03-19T14:23:33Z
dc.date.available2019-03-19T14:23:33Z
dc.date.issued2014
dc.description.abstractGubZnSnS2 VCZTS0 p re sent s p romi sing p rope rtie s fo r thin film photovoltaics VPV0 technology [;]Z • non toxic character and availability of the constituentsS • high absorption coefficient VR;M2 cm-;0 in the near-infrared and visible spectral regionsS • almost optimal direct bandgap energy V;F3 eV0Fpt_PT
dc.description.versionN/Apt_PT
dc.identifier.urihttp://hdl.handle.net/10400.22/13042
dc.language.isoengpt_PT
dc.titleInfluence of defects on photoluminescence from a Cu2ZnSnS4 thin filmpt_PT
dc.typeconference object
dspace.entity.typePublication
rcaap.rightsopenAccesspt_PT
rcaap.typeconferenceObjectpt_PT

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