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Influence of defects on photoluminescence from a Cu2ZnSnS4 thin film

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GubZnSnS2 VCZTS0 p re sent s p romi sing p rope rtie s fo r thin film photovoltaics VPV0 technology [;]Z • non toxic character and availability of the constituentsS • high absorption coefficient VR;M2 cm-;0 in the near-infrared and visible spectral regionsS • almost optimal direct bandgap energy V;F3 eV0F

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