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Abstract(s)
Single-phase SnS thin films have been grown on soda-lime glass substrates based on the sulphurization of RF-magnetron sputtered SnS2 precursors. Two different approaches to sulphurization were compared and thoroughly studied. The two series of identical precursors were sulphurized in the same furnace, inside a graphite box with and without elemental sulphur evaporation. Different maximum sulphurization temperatures, in the range 300ºC to 570ºC, were tested. Sulphurization of SnS2 precursors in a graphite box with and without sulpur vapour at high temperature produces SnS films which appear to be single-phase from the structural analysis. The studies show that the direct absorption transitions of SnS are at 1.41 eV and 1.68 eV for sulphurization in graphite box with and without elemental sulphur evaporation, respectively. The indirect absorption transition values varied from 1.49 eV e 1.37 eV.