Growth and Characterization of  SnSe2 by selenization of sputtered metallic precursors

Fernandes, P. A.; Sousa, M. G.; Salomé, P. M. P.; Teixeira, J. P.; Leitão, J. P.; Cunha, A. F. da

http://hdl.handle.net/10400.22/13043

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In the present work, we present a process to grow tin diselenide thin films by selenization at a maximum temperature of 470 ºC, of tin metallic precursor layers deposited by dc magnetron sputtering. For this maximum temperature, disklike grain morphologies were observed. Prominent XRD reflections at 2θ= 30.75º, 40.10º and 47.72º and vibration modes located at 119 cm-1 and 185 cm-1 were observed. These results allowed concluding that the dominant phase is SnSe2. The composition analysis, done by energy dispersive spectroscopy (EDS), showed that the films were close to being stoichiometric SnSe2 with a Se to Sn ratio of 1.95. Photoluminescence characterization was performed and revealed a dominant band at 0.874 eV and two other bands at ~0.74 and 1.08 eV with a lower relative intensities. The observed radiative transitions depend critically on the temperature.