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On the properties of Cu2ZnSn(S,Se)4 thin films prepared by selenization of binary precursors using rapid thermal processing

2014Journal article Open access
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dc.contributor.authorMenon, M R Rajesh
dc.contributor.authorRanjbar, Samaneh
dc.contributor.authorSousa, M G
dc.contributor.authorFernandes, P A
dc.contributor.authorCunha, A F da
dc.date.accessioned2019-03-19T16:35:52Z
dc.date.available2019-03-19T16:35:52Z
dc.date.issued2014
dc.description.abstractCu2ZnSn(S,Se)4 thin films were grown on molybdenum coated glass substrates by selenization of stacked precursor layers of zinc, tin disulfide and copper sulfide. Selenization was performed using a rapid thermal processor at maximum temperatures in the range of 400°C to 550°C and at heating rates of 1°C/s and 2°C/s. The compositional, morphological and structural characterization of the films was carried out using energy dispersive x-ray spectroscopy, scanning electron microscopy, x-ray diffraction and Raman spectroscopy. X-ray diffraction and Raman scattering analysis suggests the formation of Cu2ZnSn(S,Se)4 only at lower temperatures, whereas Cu2ZnSnSe4 was formed at higher temperatures regardless of the heating rate used. Compositional analysis revealed that the films were Zn-poor and Sn-rich. However, the samples approach a near stoichiometric composition due to the loss of tin at a selenization temperature and heating rate of 550°C and 2°C/s, respectively. Large grains with an average lateral dimension of 4.5μm were observed for films prepared at these conditions which are very desirable for an absorber for solar cells.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.1088/2053-1591/1/4/045046pt_PT
dc.identifier.issn2053-1591
dc.identifier.urihttp://hdl.handle.net/10400.22/13059
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherIOP Publishingpt_PT
dc.relation07/ST24/FEDER/002032(CENTRO)pt_PT
dc.relationPESTC/CTM/LA0025/2011pt_PT
dc.relation.publisherversionhttps://iopscience.iop.org/article/10.1088/2053-1591/1/4/045046/metapt_PT
dc.subjectCu2ZnSn(S,Se)4pt_PT
dc.subjectKesteritept_PT
dc.subjectRapid thermal processingpt_PT
dc.subjectSelenizationpt_PT
dc.subjectThin film solar cellpt_PT
dc.titleOn the properties of Cu2ZnSn(S,Se)4 thin films prepared by selenization of binary precursors using rapid thermal processingpt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBD%2F78409%2F2011/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876-PPCDTI/PTDC%2FCTM-MET%2F113486%2F2009/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/COMPETE/RECI%2FFIS-NAN%2F0183%2F2012/PT
oaire.citation.issue4pt_PT
oaire.citation.titleMaterials Research Expresspt_PT
oaire.citation.volume1pt_PT
oaire.fundingStreamSFRH
oaire.fundingStream5876-PPCDTI
oaire.fundingStreamCOMPETE
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
relation.isProjectOfPublication3420ee7c-c437-4ba9-b6a9-d61361ee77f8
relation.isProjectOfPublication1d093126-c93f-4fcc-bb2f-94316fa4ffcb
relation.isProjectOfPublication5713a20d-7d95-42d9-9a8a-2ef641090513
relation.isProjectOfPublication.latestForDiscovery1d093126-c93f-4fcc-bb2f-94316fa4ffcb

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