On the properties of Cu2ZnSn(S,Se)4 thin ﬁlms prepared by selenization of binary precursors using rapid thermal processing

Menon, M R Rajesh; Ranjbar, Samaneh; Sousa, M G; Fernandes, P A; Cunha, A F da

http://hdl.handle.net/10400.22/13059

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Cu2ZnSn(S,Se)4 thin ﬁlms were grown on molybdenum coated glass substrates by selenization of stacked precursor layers of zinc, tin disulﬁde and copper sulﬁde. Selenization was performed using a rapid thermal processor at maximum temperatures in the range of 400°C to 550°C and at heating rates of 1°C/s and 2°C/s. The compositional, morphological and structural characterization of the ﬁlms was carried out using energy dispersive x-ray spectroscopy, scanning electron microscopy, x-ray diffraction and Raman spectroscopy. X-ray diffraction and Raman scattering analysis suggests the formation of Cu2ZnSn(S,Se)4 only at lower temperatures, whereas Cu2ZnSnSe4 was formed at higher temperatures regardless of the heating rate used. Compositional analysis revealed that the ﬁlms were Zn-poor and Sn-rich. However, the samples approach a near stoichiometric composition due to the loss of tin at a selenization temperature and heating rate of 550°C and 2°C/s, respectively. Large grains with an average lateral dimension of 4.5μm were observed for ﬁlms prepared at these conditions which are very desirable for an absorber for solar cells.