Publication
Growth and Raman scattering characterization of Cu2ZnSnS4 thin films
dc.contributor.author | Fernandes, P. A. | |
dc.contributor.author | Salomé, P. M. P. | |
dc.contributor.author | Cunha, A. F. da | |
dc.date.accessioned | 2014-01-21T15:53:02Z | |
dc.date.available | 2014-01-21T15:53:02Z | |
dc.date.issued | 2009 | |
dc.description.abstract | In the present work we report the results of the growth, morphological and structural characterization of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers. The adjustment of the thicknesses and the properties of the precursors were used to control the final composition of the films. Its properties were studied by SEM/EDS, XRD and Raman scattering. The influence of the sulfurization temperature on the morphology, composition and structure of the films has been studied. With the presented method we have been able to prepare CZTS thin films with the kesterite structure. | por |
dc.identifier.doi | 10.1016/j.tsf.2008.11.031 | pt_PT |
dc.identifier.issn | 0040-6090 | |
dc.identifier.uri | http://hdl.handle.net/10400.22/3406 | |
dc.language.iso | eng | por |
dc.peerreviewed | yes | por |
dc.publisher | Elsevier | por |
dc.relation.ispartofseries | Thin Solid Films; Vol. 517, Issue 7 | |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0040609008014132 | por |
dc.subject | Cu2ZnSnS4 | por |
dc.subject | CZTS | por |
dc.subject | Sputtering | por |
dc.subject | Sulfurization | por |
dc.subject | Thin film | por |
dc.subject | Solar cell | por |
dc.subject | Raman scattering | por |
dc.title | Growth and Raman scattering characterization of Cu2ZnSnS4 thin films | por |
dc.type | journal article | |
dspace.entity.type | Publication | |
oaire.citation.endPage | 2523 | por |
oaire.citation.issue | Issue 7 | |
oaire.citation.startPage | 2519 | por |
oaire.citation.title | Thin Solid Films | por |
oaire.citation.volume | Vol. 517 | por |
rcaap.rights | openAccess | por |
rcaap.type | article | por |