Percorrer por autor "Carbo-Argibay, Enrique"
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- Expanding the applications of the wear-resistant titanium aluminum nitride thin-film to include temperature sensingPublication . Martins, Bruno; Patacas, Carlos; Cavaleiro, Albano; Faia, Pedro; Zorro, Fátima; Carbo-Argibay, Enrique; FGerreira, Paulo J.; Fernandes, Filipe; Fernandes, FilipeThis study investigates an approach to temperature sensing by integrating Titanium Aluminum Nitride (TiAlN), originally engineered for wear and corrosion applications, as a temperature sensor within a multilayered thin film system. A nitride multilayer system was developed by physical vapor deposition (PVD) using a single four-target magnetron sputtering chamber; intermediate vacuum interruption steps were employed for masking procedures. The multilayer architecture design aimed to provide the sensor layer with mechanical protection and electrical shielding. Structural and electrical characterization of the TiAlN single layer revealed semiconductor behavior and stable electrical resistance up to 750 °C, with minimal signal stabilization requirements. Despite the higher Al content, the TiAlN temperature sensor exhibited a cubic crystal structure characterized by diffuse nanolayers, resulting from a two-fold rotational deposition and target configuration. A detailed examination of the multilayer system cross-section containing the TiAlN sensor was conducted using scanning transmission electron microscopy (STEM). The analysis revealed its columnar morphology with the presence of typical PVD growth defects, including voids and droplets. While the presence of these defects may impact the electrical characteristics of the sensor, the selected experimental conditions effectively maintained the structural integrity of the multilayer system despite the vacuum interruptions caused by masking procedures. Validation experiments confirmed the functionality of the multilayer system for temperature measurements up to 400 °C. The signal acquisition system addressed room temperature resistance variations and low sensitivity (thermistor coefficient ∼100 K), resulting in a measured error of approximately 6%. This study demonstrates promising results of TiAlN as a temperature sensor within a multilayered system, expanding its range of potential applications.
- Zirconium aluminum nitride thin films for temperature sensing applicationsPublication . Fernandes, Filipe; Martins, Bruno; Patacas, Carlos; Cavaleiro, Albano; Faia, Pedro; Alves, Cristiana F. Almeida; Carbo-Argibay, Enrique; Ferreira, Paulo J.This study explores the development and characterization of zirconium aluminum nitride (ZrAlN) thin films produced via magnetron sputtering for temperature sensing applications. The sensor film is integrated into a fully nitride multilayer coating and designed to work in harsh environments. The ZrAlN demonstrated stable semiconductor behavior up to 750 °C, making it suitable for high-temperature thermistors, with a β value of approximately 850 K after signal stabilization. Detailed structural characterization confirmed a mixed-phase structure of poorly crystalline cubic ZrN and orthorhombic Zr3N4. This structure is believed to be responsible for the high resistivity of 8.0 × 105 µΩ·cm observed in Zr1-xAlxN with x = 0.3. The examination of Zr0.7Al0.3N integrated into the multilayer coating revealed a columnar morphology with diffuse nanolayers, alternating between aluminum-rich and aluminum-poor zones, caused by the two-fold rotational deposition. The sensor coating was further tested on a cutting tool substrate, with the Zr0.7Al0.3N layer exhibiting a sensitivity of 800 K and demonstrating effective temperature measurements up to 400 °C. The Zr0.7Al0.3N layer inserted in a nitride-based multilayer coating, combined with Arduino® for signal acquisition, resulted in a measured error of approximately 7 %. The setup presented the potential for integration into manufacturing environments aligned with Industry 4.0.