Publication
Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell
dc.contributor.author | Teixeira, J. P. | |
dc.contributor.author | Sousa, R. A. | |
dc.contributor.author | Sousa, M. G. | |
dc.contributor.author | Cunha, A. F. da | |
dc.contributor.author | Fernandes, P. A. | |
dc.contributor.author | Salomé, P. M. P. | |
dc.contributor.author | González, J. C. | |
dc.contributor.author | Leitão, J. P. | |
dc.date.accessioned | 2019-03-12T10:21:31Z | |
dc.date.available | 2019-03-12T10:21:31Z | |
dc.date.issued | 2014 | |
dc.description.abstract | The structure of the electronic energy levels of a single phase Cu2ZnSnS4 film, as confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence on the excitation power of the photoluminescence (PL). The behavior of the observed asymmetric band, with a peak energy at ∼1.22 eV, is compared with two theoretical models: (i) fluctuating potentials and (ii) donor-acceptor pair transitions. It is shown that the radiative recombination channels in the Cu-poor film are strongly influenced by tail states in the bandgap as a consequence of a heavy doping and compensation levels. The contribution of the PL for the evaluation of secondary phases is also highlighted. | pt_PT |
dc.description.version | info:eu-repo/semantics/publishedVersion | pt_PT |
dc.identifier.doi | 10.1063/1.4899057 | pt_PT |
dc.identifier.uri | http://hdl.handle.net/10400.22/12950 | |
dc.language.iso | eng | pt_PT |
dc.peerreviewed | yes | pt_PT |
dc.publisher | AIP Publishing | pt_PT |
dc.relation.publisherversion | https://aip.scitation.org/doi/10.1063/1.4899057 | pt_PT |
dc.title | Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell | pt_PT |
dc.type | journal article | |
dspace.entity.type | Publication | |
oaire.citation.title | Applied Physics Letters | pt_PT |
rcaap.rights | openAccess | pt_PT |
rcaap.type | article | pt_PT |