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Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy

2022Journal article Restricted access
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dc.contributor.authorAlberto, Helena V.
dc.contributor.authorVilão, Rui C.
dc.contributor.authorRibeiro, Eduardo F. M.
dc.contributor.authorGil, João M.
dc.contributor.authorCurado, Marco A.
dc.contributor.authorTeixeira, Jennifer P.
dc.contributor.authorFernandes, Paulo A.
dc.contributor.authorCunha, José M. V.
dc.contributor.authorSalomé, Pedro M. P.
dc.contributor.authorEdoff, Marika
dc.contributor.authorMartins, Maria I.
dc.contributor.authorProkscha, Thomas
dc.contributor.authorSalman, Zaher
dc.contributor.authorWeidinger, Alois
dc.date.accessioned2023-01-25T10:34:56Z
dc.date.embargo2035
dc.date.issued2022
dc.description.abstractAs devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth-resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se2 absorber and various buffer layers are investigated using low-energy muon spin rotation (μSR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long-range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath-deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry-deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy μSR spectroscopy for microscopic interfacial studies of multilayer systems.pt_PT
dc.description.sponsorshipThis work is based on experiments performed at the Swiss Muon Source (SμS), Paul Scherrer Institute, Villigen, Switzerland. A.W. thanks Prof. Klaus Lips for the invitation to the Helmholtz-Zentrum Berlin für Materialien und Energie. This work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and by national funds from FCT - Fundação para a Ciância e Tecnologia, I. P. (Portugal) under projects PTDC/FIS-MAC/29696/2017, PD/BD/142780/2018, UID/04564/2020, UIDB/04730/2020, UIDP/04730/2020, UIDB/50025/2020, and UIDP/50025/2020.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.1002/admi.202200374pt_PT
dc.identifier.urihttp://hdl.handle.net/10400.22/21845
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherWileypt_PT
dc.relationUID/04564/2020pt_PT
dc.relationDevelopment of innovative nanostructured dielectric materials for interface passivation in thin film solar cells
dc.relationIndustrial relevant electrical passivation of thin films solar cell interfaces
dc.relationCenter for Innovation in Industrial Engineering and Technology
dc.relationCenter for Innovation in Industrial Engineering and Technology
dc.relationInstitute of Nanostructures, Nanomodelling and Nanofabrication
dc.relationInstitute of Nanostructures, Nanomodelling and Nanofabrication
dc.relation.publisherversionhttps://onlinelibrary.wiley.com/doi/10.1002/admi.202200374pt_PT
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/pt_PT
dc.titleCharacterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopypt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleDevelopment of innovative nanostructured dielectric materials for interface passivation in thin film solar cells
oaire.awardTitleIndustrial relevant electrical passivation of thin films solar cell interfaces
oaire.awardTitleCenter for Innovation in Industrial Engineering and Technology
oaire.awardTitleCenter for Innovation in Industrial Engineering and Technology
oaire.awardTitleInstitute of Nanostructures, Nanomodelling and Nanofabrication
oaire.awardTitleInstitute of Nanostructures, Nanomodelling and Nanofabrication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/9471 - RIDTI/PTDC%2FFIS-MAC%2F29696%2F2017/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/POR_CENTRO/PD%2FBD%2F142780%2F2018/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F04730%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F04730%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50025%2F2020/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT
oaire.citation.issue19pt_PT
oaire.citation.startPage2200374pt_PT
oaire.citation.titleAdvanced Materials Interfacespt_PT
oaire.citation.volume9pt_PT
oaire.fundingStream9471 - RIDTI
oaire.fundingStreamPOR_CENTRO
oaire.fundingStream6817 - DCRRNI ID
oaire.fundingStream6817 - DCRRNI ID
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oaire.fundingStream6817 - DCRRNI ID
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project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsclosedAccesspt_PT
rcaap.typearticlept_PT
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