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Study of optical and structural properties of Cu2ZnSnS4 thin films

dc.contributor.authorLeitão, J. P.
dc.contributor.authorSantos, Nuno Miguel
dc.contributor.authorFernandes, P. A.
dc.contributor.authorSalomé, P. M. P.
dc.contributor.authorCunha, A. F. da
dc.contributor.authorGonzález, J. C.
dc.contributor.authorMatinaga, F. M.
dc.date.accessioned2014-01-21T10:58:47Z
dc.date.available2014-01-21T10:58:47Z
dc.date.issued2011
dc.description.abstractCu2ZnSnS4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu2ZnSnS4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu2ZnSnS4 phase. The studied films were copper poor and zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed a good crystallinity and compactness. An absorption coefficient varying between 3 and 4×104cm−1 was measured in the energy range between 1.75 and 3.5 eV. The band gap energy was estimated in 1.51 eV. Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this emission on the excitation power and temperature was investigated and compared to the predictions of the donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations. Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail states created by potential fluctuations.por
dc.identifier.doi10.1016/j.tsf.2010.12.105pt_PT
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/10400.22/3388
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevierpor
dc.relation.ispartofseriesThin Solid Films; Vol. 519, Issue 21
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609010017360por
dc.subjectCu2ZnSnS4por
dc.subjectThin filmspor
dc.subjectSulphurizationpor
dc.subjectPhotoluminescencepor
dc.subjectPotential fluctuationspor
dc.titleStudy of optical and structural properties of Cu2ZnSnS4 thin filmspor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage7393por
oaire.citation.issueIssue 21por
oaire.citation.startPage7390por
oaire.citation.titleThin Solid Filmspor
oaire.citation.volumeVol. 519por
rcaap.rightsopenAccesspor
rcaap.typearticlepor

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