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Advisor(s)
Abstract(s)
Cu2ZnSnS4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we
investigated optical and structural properties of Cu2ZnSnS4 thin films grown by sulphurization of metallic
precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction
measurements showing the presence of only the Cu2ZnSnS4 phase. The studied films were copper poor and
zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed
a good crystallinity and compactness. An absorption coefficient varying between 3 and 4×104cm−1 was
measured in the energy range between 1.75 and 3.5 eV. The band gap energy was estimated in 1.51 eV.
Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this
emission on the excitation power and temperature was investigated and compared to the predictions of the
donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations.
Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail
states created by potential fluctuations.
Description
Keywords
Cu2ZnSnS4 Thin films Sulphurization Photoluminescence Potential fluctuations