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In this work, we present the Raman peak
positions of the quaternary pure selenide compound
Cu2ZnSnSe4 (CZTSe) and related secondary phases that
were grown and studied under the same conditions. A vast
discussion about the position of the X-ray diffraction
(XRD) reflections of these compounds is presented. It is
known that by using XRD only, CZTSe can be identified
but nothing can be said about the presence of some secondary
phases. Thin films of CZTSe, Cu2SnSe3, ZnSe,
SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed
their investigation by Raman spectroscopy (RS). Here we
present all the Raman spectra of these phases and discuss
the similarities with the spectra of CZTSe. The effective
analysis depth for the common back-scattering geometry
commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were estimated
for different wavelength values. The observed
asymmetric PL band on a CZTSe film is compatible with
the presence of CZTSe single-phase and is discussed in the
scope of the fluctuating potentials’ model. The estimated
bandgap energy is close to the values obtained from
absorption measurements. In general, the phase identification
of CZTSe benefits from the contributions of RS and
PL along with the XRD discussion.
Descrição
Palavras-chave
ZnSe Bandgap Energy Secondary Phasis Power Conversion Efficiency Raman Spectroscopy
Contexto Educativo
Citação
Editora
Springer Verlag