Publication
SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness
| dc.contributor.author | Oliveira, Kevin | |
| dc.contributor.author | Teixeira, Jennifer P. | |
| dc.contributor.author | Chen, Wei-Chao | |
| dc.contributor.author | Lontchi Jioleo, Jackson | |
| dc.contributor.author | Oliveira, Antonio J. N. | |
| dc.contributor.author | Caha, Ihsan | |
| dc.contributor.author | Francis, Leonard Deepak | |
| dc.contributor.author | Flandre, Denis | |
| dc.contributor.author | Edoff, Marika | |
| dc.contributor.author | Fernandes, Paulo A. | |
| dc.contributor.author | Salome, Pedro M. P. | |
| dc.date.accessioned | 2023-01-27T09:11:41Z | |
| dc.date.available | 2023-01-27T09:11:41Z | |
| dc.date.issued | 2022 | |
| dc.description.abstract | Interface recombination in sub-µm optoelectronics has a major detrimental impact on devices’ performance, showing the need for tailored passivation strategies to reach a technological boost. In this work, SiOx passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. This study aims to understand the impact of a passivation strategy, which uses several SiOx layer thicknesses (3, 8, and 25 nm) integrated into high performance substrates (HPS). The experimental study is complemented with 3D Lumerical finite-difference time-domain (FDTD) and 2D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiOx layer thickness in the CIGS solar cell performance. This study shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8 nm novel SiOx based substrate achieved a light to power conversion efficiency value of 13.2 %, a 1.3 % absolute improvement over the conventional Mo substrate (without SiOx). | pt_PT |
| dc.description.version | info:eu-repo/semantics/submittedVersion | pt_PT |
| dc.identifier.doi | 10.1109/JPHOTOV.2022.3165764 | pt_PT |
| dc.identifier.uri | http://hdl.handle.net/10400.22/21927 | |
| dc.language.iso | eng | pt_PT |
| dc.peerreviewed | no | pt_PT |
| dc.publisher | IEEE | pt_PT |
| dc.relation.publisherversion | https://ieeexplore.ieee.org/document/9765844 | pt_PT |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | pt_PT |
| dc.subject | Cu(In,Ga)Se2 (CIGS) | pt_PT |
| dc.subject | Silicon oxide (SiOx) | pt_PT |
| dc.subject | Rear passivation strategy, | pt_PT |
| dc.subject | High performance substrate | pt_PT |
| dc.subject | Ultrathin | pt_PT |
| dc.subject | Optical simulations | pt_PT |
| dc.subject | Electrical simulations | pt_PT |
| dc.title | SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness | pt_PT |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.citation.endPage | 961 | pt_PT |
| oaire.citation.issue | 4 | pt_PT |
| oaire.citation.startPage | 954 | pt_PT |
| oaire.citation.title | IEEE Journal of Photovoltaics | pt_PT |
| oaire.citation.volume | 12 | pt_PT |
| person.familyName | Fernandes | |
| person.givenName | Paulo | |
| person.identifier.orcid | 0000-0002-1860-7797 | |
| person.identifier.rid | J-5264-2013 | |
| person.identifier.scopus-author-id | 35568397500 | |
| rcaap.rights | openAccess | pt_PT |
| rcaap.type | article | pt_PT |
| relation.isAuthorOfPublication | 75281af2-3dd9-4a53-a2eb-07de6b8e8ba4 | |
| relation.isAuthorOfPublication.latestForDiscovery | 75281af2-3dd9-4a53-a2eb-07de6b8e8ba4 |