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Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

dc.contributor.authorFernandes, P. A.
dc.contributor.authorSartori, A. F.
dc.contributor.authorSalomé, P. M. P.
dc.contributor.authorMalaquias, J.
dc.contributor.authorCunha, A. F. da
dc.contributor.authorGraça, M. P. F.
dc.contributor.authorGonzález, J. C.
dc.date.accessioned2014-01-21T10:31:22Z
dc.date.available2014-01-21T10:31:22Z
dc.date.issued2012
dc.description.abstractIn this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage, 360 mV; and short circuit current density, 6.8 mA/cm2.por
dc.identifier.doi10.1063/1.4726042pt_PT
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10400.22/3383
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherAmerican Institute of Physicspor
dc.relation.ispartofseriesApplied Physics Letters; Vol. 100
dc.relation.publisherversionhttp://scitation.aip.org/content/aip/journal/apl/100/23/10.1063/1.4726042por
dc.titleAdmittance spectroscopy of Cu2ZnSnS4 based thin film solar cellspor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage4por
oaire.citation.startPage1por
oaire.citation.titleApplied Physics Letterspor
oaire.citation.volumeVol. 100por
rcaap.rightsopenAccesspor
rcaap.typearticlepor

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