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In this report, we propose an AC response equivalent circuit model to describe the admittance
measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic
precursors. This circuit describes the contact resistances, the back contact, and the heterojunction
with two trap levels. The study of the back contact resistance allowed the estimation of a back
contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed
defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were
obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage,
360 mV; and short circuit current density, 6.8 mA/cm2.
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American Institute of Physics