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Advisor(s)
Abstract(s)
The structural and optical properties of two solar cells in which
the Cu2ZnSnS4 absorber layer was sulphurized by two different
methods (S flux and graphite box), were studied. The grain
sizes are dependent on the sulphurization method, the larger
ones being obtained for the sulphurization in a S flux. The optical
properties were investigated by photoluminescence (PL). A
broad and asymmetric band was observed for the sample with
the larger grains, whereas for the other one a very broad emission
was obtained, mostly influenced by the CdS buffer layer.
The dependence on the excitation power revealed the influence of fluctuating potentials created by strong doping and high compensation
of the absorber layer. Radiative recombination channels
are quite different from the ones typical of semiconductor
materials with flat bands. A relationship between the PL intensity
from the absorber layer measured at low temperatures, and
the final PV performance is established. Thus, we propose that
PL can be used as an evaluation experimental technique in order
to decide if a certain absorber should be processed into a full
solar cell or not.
Description
Keywords
Cu2ZnSnS4 Defects Grain boundaries Photoluminescence