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The theoretical models of radiative recombinations in both CuIn1−xGaxSe2 chalcopyrite and Cu2ZnSnS4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu2ZnSnS4-based solar cells in which the absorber layer was grown through sulphurization of multiperiod structuresofprecursorlayers.Forbothsamplestheluminescenceisdominatedbyanasymmetricbandwithpeak energy at∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed
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American Physical Society