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Orientador(es)
Resumo(s)
In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic
precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested,
ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and
Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated
with the sulphurization temperature. Optical measurements were performed to obtain transmittance and
reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for
the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical
characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were
built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.
Descrição
Palavras-chave
Tin sulphide Sulphurization Thin film Solar cell
Contexto Educativo
Citação
Editora
Elsevier