| Name: | Description: | Size: | Format: | |
|---|---|---|---|---|
| 2.6 MB | Adobe PDF |
Advisor(s)
Abstract(s)
In this work, we present an experimental study of a Cu(In,Ga)Se2 (CIGS)-based solar cell (SC), irradiated with protons of energy 80 and 180 keV and with fuences of 1012 , 1013 , and 1014 cm−2 , as well as a strategy to recover the induced damage. The possible modifcations of the structural, electrical, and optical properties,
induced by the proton irradiation, were investigated. Although the irradiation did not promote any major modifcation in the crystalline structure, it did induce the creation of defects responsible for changes in the electronic structure which caused a partial PL quenching and signifcant changes in the PL spectral shape,
as well as a reduction of the power conversion efciency and open-circuit voltage of up to 30% as revealed by J–V measurements. The photoluminescence results showed a broadening, redshift and decrease in the signal-to-noise ratio. The recovery of damage induced by irradiation in several SCs was tested through annealing steps performed at diferent temperatures and time intervals. It was found that the best recovery strategy for the investigated irradiation parameters was carrying out several isothermal annealing at 200°C for 30 min. This strategy is compatible with the intermitent variation of the temperature in space and allowed to recover a power conversion efciency comparable to that of the as grown cell. In particular, it must be highlighted that keeping the SC at room temperature in ambient atmosphere and in the dark, did not promote signifcant recovery in contradiction with some previous reports. This recovery methodology was applied in parallel for non-irradiated SCs and no increase in power conver sion efciency was found, but rather a slight decrease. The dominant radiative recombination channel was, apparently, unchanged with the irradiation and the subsequent recovery process. Nonetheless, changes in the concentration of defects of diferent types cannot be excluded, which is in line with a signifcant infuence of fuctuating potentials in both as grown and after recovery stages of the solar
cell. This work constitutes a frst systematic study that simultaneously encompasses the infuence of proton irradiation on the optical and electrical properties of CIGS SCs and a damage recovery methodology with a high potential to be explored in space applications. Additionally, it contributes to reinforcing the high potential of CIGS technology in the context of creating constellations of small satellites that are being developed by diferent entities, particularly private ones.
Description
Keywords
Proton irradiation Cu(In,Ga)Se2 CIGS, solar cells Photoluminescence Annealing recovery
Citation
Candeias, M.B., Fernandes, T.V., Falcão, B.P. et al. Cu(In,Ga)Se -based solar cells for space applications: proton irradiation and annealing recovery. J Mater Sci 58, 16385–16401 (2023). https://doi.org/10.1007/s10853-023-09033-x
Publisher
Springer