Novel Light Management Concepts in Ultra-thin CIGS Solar Cells

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Over 100 mV VOC improvement for rear passivated ACIGS ultra‐thin solar cells

Publication . Oliveira, Antonio; Rocha Curado, Marco; Teixeira, J. P.; Tomé, Daniela; Çaha, Ihsan; Oliveira, Kevin; Lopes, Tomás; Monteiro, Margarida; Violas, André; Correira, Maria; Fernandes, Paulo; Deepak, Francis; Edoff, Marika; Salomé, Pedro

A decentralized energy system requires photovoltaic solutions to meet new aesthetic paradigms, such as lightness, flexibility, and new form factors. Notwithstanding, the materials shortage in the Green Transition is a concern gaining momentum due to their foreseen continuous demand. A fruitful strategy to shrink the absorber thickness, meeting aesthetic and shortage materials consumption targets, arises from interface passivation. However, a deep understanding of passivated systems is required to close the efficiency gap between ultra-thin and thin film devices, and to mono-Si. Herein, a (Ag,Cu)(In,Ga)Se2 ultra-thin solar cell, with 92% passivated rear interface area, is compared with a conventional nonpassivated counterpart. A thin MoSe2 layer, for a quasi-ohmic contact, is present in the two architectures at the contacts, despite the passivated device narrow line scheme. The devices present striking differences in charge carrier dynamics. Electrical and optoelectronic analysis combined with SCAPS modelling suggest a lower recombination rate for the passivated device, through a reduction on the rear surface recombination velocity and overall defects, comparing with the reference solar cell. The new architecture allows for a 2% efficiency improvement on a 640 nm ultra-thin device, from 11% to 13%, stemming from an open circuit voltage increase of 108 mV.

2023Journal article

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Design of experiments optimization of fluorine-doped tin oxide films prepared by spray pyrolysis for photovoltaic applications

Publication . Pinheiro, X.L.; Vilanova, A.; Mesquita, D.; Monteiro, M.; Eriksson, J.A.M.; Barbosa, J.R.S.; Matos, C.; Oliveira, A.J.N.; Oliveira, K.; Capitão, J.; Loureiro, E.; Fernandes, Paulo A.; Mendes, A.; Salomé, P.M.P.

Transparent conducting oxides (TCOs) have witnessed an ever-expanding use in our lives through many optoelectronic applications, namely photovoltaic (PV) devices. Indium-tin oxide (ITO) is the most used and studied TCO, but it lacks thermal and chemical stability and indium is a scarce and toxic element. Fluorine-doped tin oxide (FTO) emerged as the most promising alternative to ITO, presenting better thermal and chemical stability. Among the numerous techniques for depositing FTO thin films over glass substrates, spray pyrolysis is the simplest and most economical, with great potential for upscaling. However, the relative importance of the experimental variables that influence the optoelectronic properties remains barely addressed. Following this premise, the present work aimed at optimizing the deposition of FTO films on soda lime glass (SLG) substrates by spray pyrolysis following a Design of Experiments (DoE) methodology. The optoelectronic properties of FTO-SLG substrates was evaluated based on their optical transmittance and sheet resistance, both combined in a figure of merit (FoM) tailored for PV applications. It was concluded that the volume of sprayed solution and the fluorine/tin ratio in the precursor have the greatest influence in the FoM, being the optimal deposition conditions a sprayed volume of 60.8 ml and a [F]/[Sn] ratio of 0.45. FTO-SLG substrates prepared with these conditions achieved a FoM of 0.680 Ω□−1/10, corresponding to a sheet resistance of 3.40 Ω□ and a transmittance equivalent to 77% of the maximum current generated in the considered spectrum. The improved FoM was validated in dye-sensitized and perovskite solar cells (DSSCs and PSCs, respectively), assembled with in-house optimized and commercial substrates. The efficiency of DSSCs was improved by 8.9% (relative), whereas PSCs achieved a light-to-power efficiency of 17% (absolute), corresponding to an improvement of 4.7% (relative).

2022Journal article

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Cu(In,Ga)Se2 based ultrathin solar cells: the pathway from lab rigid to large scale flexible technology

Publication . Lopes, Tomás; Teixeira, Jennifer; Curado, Marco; Ferreira, Bernado; Oliveira, Antonio; Cunha, José; Monteiro, Margarida; Violas, André; Barbosa, João; Sousa, Patricia; Çaha, Ihsan; Borme, Jérôme; Oliveira, Kevin; Ring, Johan; Chen, Wei; Zhou, Ye; Takei, Klara; Niemi, Esko; Francis, Leonard; Edoff, Marika; Brammertz, Guy; Fernandes, Paulo; Vermang, Bart; Salomé, Pedro

For the first time, the incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 (CIGS) based solar cells is shown in a flexible lightweight stainless-steel substrate. The fabrication was based on an industry scalable lithography technique - nanoimprint lithography (NIL) - for a 15x15 cm2 dielectric layer patterning, needed to reduce optoelectronic losses at the rear interface. The nanopatterning schemes are usually developed by lithographic techniques or by processes with limited scalability and reproducibility (nanoparticle lift-off, spin-coating, etc). However, in this work the dielectric layer is patterned using NIL, a low cost, large area, high resolution, and high throughput technique. To assess the NIL performance, devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. Up to now, EBL is considered the most reliable technique for patterning laboratory samples. The device patterned by NIL shows similar light to power conversion efficiency average values compared to the EBL patterned device - 12.6 % vs 12.3 %, respectively - highlighting the NIL potential for application in the solar cell sector. Moreover, the impact of the lithographic processes, such as different etch by-products, in the rigid solar cells’ figures of merit were evaluated from an elemental point of view via X-ray Photoelectron Spectroscopy and electrically through a Solar Cell Capacitance Simulator (SCAPS) fitting procedure. After an optimised NIL process, the device on stainless-steel achieved an average power conversion efficiency value of 11.7 % - a slightly lower value than the one obtained for the rigid approach, due to additional challenges raised by processing and handling steel substrates, even though scanning transmission electron microscopy did not show any clear evidence of impurity diffusion towards the absorber. Notwithstanding, time-resolved photoluminescence results strongly suggested the presence of additional non-radiative recombination mechanisms in the stainless-steel absorber, which were not detected in the rigid solar cells, and are compatible with elemental diffusion from the substrate. Nevertheless, bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device up to 500 bending cycles.

2022Journal article

Open access