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Over 100 mV VOC improvement for rear passivated ACIGS ultra‐thin solar cells
Publication . Oliveira, Antonio; Rocha Curado, Marco; Teixeira, J. P.; Tomé, Daniela; Çaha, Ihsan; Oliveira, Kevin; Lopes, Tomás; Monteiro, Margarida; Violas, André; Correira, Maria; Fernandes, Paulo; Deepak, Francis; Edoff, Marika; Salomé, Pedro
A decentralized energy system requires photovoltaic solutions to meet new aesthetic paradigms, such as lightness, flexibility, and new form factors. Notwithstanding, the materials shortage in the Green Transition is a concern gaining momentum due to their foreseen continuous demand. A fruitful strategy to shrink the absorber thickness, meeting aesthetic and shortage materials consumption targets, arises from interface passivation. However, a deep understanding of passivated systems is required to close the efficiency gap between ultra-thin and thin film devices, and to mono-Si. Herein, a (Ag,Cu)(In,Ga)Se2 ultra-thin solar cell, with 92% passivated rear interface area, is compared with a conventional nonpassivated counterpart. A thin MoSe2 layer, for a quasi-ohmic contact, is present in the two architectures at the contacts, despite the passivated device narrow line scheme. The devices present striking differences in charge carrier dynamics. Electrical and optoelectronic analysis combined with SCAPS modelling suggest a lower recombination rate for the passivated device, through a reduction on the rear surface recombination velocity and overall defects, comparing with the reference solar cell. The new architecture allows for a 2% efficiency improvement on a 640 nm ultra-thin device, from 11% to 13%, stemming from an open circuit voltage increase of 108 mV.
Design of experiments optimization of fluorine-doped tin oxide films prepared by spray pyrolysis for photovoltaic applications
Publication . Pinheiro, X.L.; Vilanova, A.; Mesquita, D.; Monteiro, M.; Eriksson, J.A.M.; Barbosa, J.R.S.; Matos, C.; Oliveira, A.J.N.; Oliveira, K.; Capitão, J.; Loureiro, E.; Fernandes, Paulo A.; Mendes, A.; Salomé, P.M.P.
Transparent conducting oxides (TCOs) have witnessed an ever-expanding use in our lives through many optoelectronic applications, namely photovoltaic (PV) devices. Indium-tin oxide (ITO) is the most used and studied TCO, but it lacks thermal and chemical stability and indium is a scarce and toxic element. Fluorine-doped tin oxide (FTO) emerged as the most promising alternative to ITO, presenting better thermal and chemical stability. Among the numerous techniques for depositing FTO thin films over glass substrates, spray pyrolysis is the simplest and most economical, with great potential for upscaling. However, the relative importance of the experimental variables that influence the optoelectronic properties remains barely addressed. Following this premise, the present work aimed at optimizing the deposition of FTO films on soda lime glass (SLG) substrates by spray pyrolysis following a Design of Experiments (DoE) methodology. The optoelectronic properties of FTO-SLG substrates was evaluated based on their optical transmittance and sheet resistance, both combined in a figure of merit (FoM) tailored for PV applications. It was concluded that the volume of sprayed solution and the fluorine/tin ratio in the precursor have the greatest influence in the FoM, being the optimal deposition conditions a sprayed volume of 60.8 ml and a [F]/[Sn] ratio of 0.45. FTO-SLG substrates prepared with these conditions achieved a FoM of 0.680 Ω□−1/10, corresponding to a sheet resistance of 3.40 Ω□ and a transmittance equivalent to 77% of the maximum current generated in the considered spectrum. The improved FoM was validated in dye-sensitized and perovskite solar cells (DSSCs and PSCs, respectively), assembled with in-house optimized and commercial substrates. The efficiency of DSSCs was improved by 8.9% (relative), whereas PSCs achieved a light-to-power efficiency of 17% (absolute), corresponding to an improvement of 4.7% (relative).

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Funding agency

Fundação para a Ciência e a Tecnologia

Funding programme

POR_NORTE

Funding Award Number

2021.04588.BD

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