Browsing by Author "Ribeiro, Rodrigo M."
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- Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar CellsPublication . Cunha, Jose M. V.; Fernandes, P. A.; Salome, Pedro M. P.; Lopes, Tomas S.; Bose, Sourav; Hultqvist, Adam; Chen, Wei-Chao; Donzel-Gargand, Olivier; Ribeiro, Rodrigo M.; Oliveira, Antonio J. N.; Edoff, MarikaA novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface quality with CIGS by adding a sputtered Al 2 O 3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
- Encapsulation of Nanostructures in a Dielectric Matrix Providing Optical Enhancement in Ultrathin Solar CellsPublication . Oliveira, Antonio; de Wild, Jessica; Oliveira, Kevin; Valença, Beatriz A.; Guerreiro, Joana Rafaela; Abalde-Cela, Sara; Lopes, Tomás; Ribeiro, Rodrigo M.; Cunha, José Miguel; M.C.Alberto; Monteiro, Margarida; Violas, André; Silva, Ana Gomes; Prado, Marta; Fernandes, P. A.; Vermang, Bart; Salomé, P. M. P.The incorporation of nanostructures in optoelectronic devices for enhancing their optical performance is widely studied. However, several problems related to the processing complexity and the low performance of the nanostructures have hindered such actions in real-life devices. Herein, a novel way of introducing gold nanoparticles in a solar cell structure is proposed in which the nanostructures are encapsulated with a dielectric layer, shielding them from high temperatures and harsh growth processing conditions of the remaining device. Through optical simulations, an enhancement of the effective optical path length of approximately four times the nominal thickness of the absorber layer is verified with the new architecture. Furthermore, the proposed concept in a Cu(In,Ga)Se2 solar cell device is demonstrated, where the short-circuit current density is increased by 17.4%. The novel structure presented in this work is achieved by combining a bottom-up chemical approach of depositing the nanostructures with a top-down photolithographic process, which allows for an electrical contact.