Browsing by Author "Hultqvist, Adam"
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- A comparison between thin film solar cells made from co-evaporated CuIn1-xGaxSe2using a one-stage process versus a three-stage processPublication . Salomé, Pedro M.P.; Fjällström, Viktor; Szaniawski, Piotr; Leitão, Joaquim P.; Hultqvist, Adam; Fernandes, Paulo A.; Teixeira, Jennifer P.; Falcão, Bruno P.; Zimmermann, Uwe; Cunha, António F. da; Edoff, MarikaUntil this day, the most efficient Cu(In,Ga)Se2 thin film solar cells have been prepared using a rather complex growth process often referred to as three-stage or multistage. This family of processes is mainly characterized by a first step deposited with only In, Ga and Se flux to form a first layer. Cu is added in a second step until the film becomes slightly Cu-rich, where-after the film is converted to its final Cu-poor composition by a third stage, again with no or very little addition of Cu. In this paper, a comparison between solar cells prepared with the three-stage process and a one-stage/in-line process with the same composition, thickness, and solar cell stack is made. The one-stage process is easier to be used in an industrial scale and do not have Cu-rich transitions. The samples were analyzed using glow discharge optical emission spectroscopy, scanning electron microscopy, X-ray diffraction, current–voltage-temperature, capacitance-voltage, external quantum efficiency, transmission/reflection, and photoluminescence. It was concluded that in spite of differences in the texturing, morphology and Ga gradient, the electrical performance of the two types of samples is quite similar as demonstrated by the similar J–V behavior, quantum spectral response, and the estimated recombination losses.
- Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar CellsPublication . Cunha, Jose M. V.; Fernandes, P. A.; Salome, Pedro M. P.; Lopes, Tomas S.; Bose, Sourav; Hultqvist, Adam; Chen, Wei-Chao; Donzel-Gargand, Olivier; Ribeiro, Rodrigo M.; Oliveira, Antonio J. N.; Edoff, MarikaA novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface quality with CIGS by adding a sputtered Al 2 O 3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
- Rear Optical Reflection and Passivation Using a Nanopatterned Metal/Dielectric Structure in Thin-Film Solar CellsPublication . Lopes, Tomas S.; Cunha, Jose M. V.; Bose, Sourav; Barbosa, Joao R. S.; Borme, Jerome; Donzel-Gargand, Olivier; Rocha, Celia; Silva, Ricardo; Hultqvist, Adam; Chen, Wei-Chao; Silva, Ana G.; Edoff, Marika; Fernandes, P. A.; Salome, Pedro M. P.Currently, one of the main limitations in ultrathin Cu(In,Ga)Se 2 (CIGS) solar cells are the optical losses, since the absorber layer is thinner than the light optical path. Hence,light management, including rear optical reflection, and light trapping is needed. In this paper, we focus on increasing the rear optical reflection. For this, a novel structure based on having a metal interlayer in between the Mo rear contact and the rear passivation layer is presented. In total, eight different metallic interlayers are compared. For the whole series, the passivation layer is aluminum oxide (Al 2 O 3 ). The interlayers are used to enhance the reflectivity of the rear contact and thereby increasing the amount of light reflected back into the absorber. In order to understand the effects of the interlayer in the solar cell performance both from optical and/or electrical point of view, optical simulations were performed together with fabrication and electrical measurements. Optical simulations results are compared with current density-voltage (J-V) behavior and external quantum efficiency measurements. A detailed comparison between all the interlayers is done, in order to identify the material with the greatest potential to be used as a rear reflective layer for ultrathin CIGS solar cells and to establish fabrication challenges. The Ti-W alloy is a promising a rear reflective layer since it provides solar cells with light to power conversion efficiency values of 9.9%, which is 2.2% (abs) higher than the passivated ultrathin sample and 3.7% (abs) higher than the unpassivated ultrathin reference sample.