Browsing by Author "Faia, Pedro"
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- Can ZrAlN thin films be used as thermistor sensors for temperature assessment?Publication . Martins, Bruno; Patacas, Carlos; Cavaleiro, Albano; Faia, Pedro; Bondarchuk, Oleksandr; Fernandes, FilipeThe electrical characteristics and conduction mechanisms of ZrAlN thin films for their potential use as thermistor sensors were assessed. Various compositions of Zr1-xAlxN were synthesized by sputtering and studied up to 200 °C to understand their sensitivity and applicability. Among the compositions studied, the ones with x = 0.34 and x = 0.46 showed the highest sensitivities, reaching values close to 3000 K. However, the thermo-resistive properties exhibited by these compositions limited their utilization above 100 °C. Zr1-xAlxN film compositions with x higher than 0.46 showed amorphous structures and were found to be insulative. Composition with x = 0.26, within the cubic phase, showed the most promising electrical properties regarding temperature sensing in the studied range. XPS analysis of this composition confirmed the presence of Zr-N and Al-N bonds, with a Zr3+ oxidation state, which suggests the availability of a free electron contributing to the electrical conduction. Impedance measurements performed at different temperatures for this composition revealed the dominant role of the grain boundaries in the conduction mechanism, based upon electron hopping between grains, overcoming the energy barrier imposed by the grain boundaries. ZrAlN thin films demonstrate negative temperature coefficient (NTC) thermistor behavior, expanding their applications beyond protective coatings to temperature monitoring.
- Electrical properties and thermistor behavior of TiAlN thin films deposited by combinatorial sputteringPublication . Martins, Bruno; Patacas, Carlos; Cavaleiro, Albano; Faia, Pedro; Bondarchuk, Oleksandr; Fernandes, FilipeA combinatorial deposition was performed by direct current magnetron sputtering (DCMS) to develop Ti1-xAlxN thin films with different Ti/Al ratios and investigate the electrical response to temperature. The crystal structure as a function of the x was studied by X-ray diffraction, and sheet resistance response was measured up to 200 ◦C. From x = 0.16 to x = 0.56, the film shows an fcc phase with Al in solid solution in the TiN matrix, whilst, from x ≥ 0.69, a mixture of hcp (AlN) and fcc phases is observed. A negative temperature coefficient (NTC) thermistor behavior was found from x = 0.21 onwards, and a maximum sensitivity β of 1600 K was observed for x = 0.56 and 0.69. One fcc sample (x = 0.46) was selected to analyze the chemical states by X-ray photoelectron spectroscopy and the impedance behavior with the temperature by electrical impedance spectroscopy. The crystal structure, bond states and impedance analysis were compared with an AlN thin film. It is concluded that the conduction mechanism for x = 0.46 is based upon electron hopping, and the effect of the grain boundary is more relevant than the grain at low temperatures. We demonstrate that it is possible to use TiAlN as an NTC-thermistor with different crystal structures and chemical compositions.
- Expanding the applications of the wear-resistant titanium aluminum nitride thin-film to include temperature sensingPublication . Martins, Bruno; Patacas, Carlos; Cavaleiro, Albano; Faia, Pedro; Zorro, Fátima; Carbo-Argibay, Enrique; FGerreira, Paulo J.; Fernandes, Filipe; Fernandes, FilipeThis study investigates an approach to temperature sensing by integrating Titanium Aluminum Nitride (TiAlN), originally engineered for wear and corrosion applications, as a temperature sensor within a multilayered thin film system. A nitride multilayer system was developed by physical vapor deposition (PVD) using a single four-target magnetron sputtering chamber; intermediate vacuum interruption steps were employed for masking procedures. The multilayer architecture design aimed to provide the sensor layer with mechanical protection and electrical shielding. Structural and electrical characterization of the TiAlN single layer revealed semiconductor behavior and stable electrical resistance up to 750 °C, with minimal signal stabilization requirements. Despite the higher Al content, the TiAlN temperature sensor exhibited a cubic crystal structure characterized by diffuse nanolayers, resulting from a two-fold rotational deposition and target configuration. A detailed examination of the multilayer system cross-section containing the TiAlN sensor was conducted using scanning transmission electron microscopy (STEM). The analysis revealed its columnar morphology with the presence of typical PVD growth defects, including voids and droplets. While the presence of these defects may impact the electrical characteristics of the sensor, the selected experimental conditions effectively maintained the structural integrity of the multilayer system despite the vacuum interruptions caused by masking procedures. Validation experiments confirmed the functionality of the multilayer system for temperature measurements up to 400 °C. The signal acquisition system addressed room temperature resistance variations and low sensitivity (thermistor coefficient ∼100 K), resulting in a measured error of approximately 6%. This study demonstrates promising results of TiAlN as a temperature sensor within a multilayered system, expanding its range of potential applications.