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Advisor(s)
Abstract(s)
Cu2ZnSnS4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement
for Cu(In,Ga)Se2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly,
because of the formation of secondary phases like ZnS, CuxSnSx+1, SnxSy, Cu2−xS and MoS2. X-ray diffraction
analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from
the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering
analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption
coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of
profiling the different phases present in multi-phase CZTS thin films.
This work describes in a concise form the methods used to grow chalcogenide compounds, such as,
CZTS, CuxSnSx+1, SnxSy and cubic ZnS based on the sulphurization of stacked metallic precursors. The
results of the films’ characterization by XRD, electron backscatter diffraction and scanning electron
microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation
of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated.
The results of the Raman analysis of the phases formed in this growth method and the advantage
of using this technique in identifying them are presented. Using different excitation wavelengths it is
also analysed the CZTS film in depth showing that this technique can be used as non destructive methods
to detect secondary phases.
Description
Keywords
Cu2ZnSnS4 Thin film Raman XRD EBSD
Citation
Publisher
Elsevier