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Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3: Culprits and benefits

2020Journal article Open access
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dc.contributor.authorCurado, M.A.
dc.contributor.authorTeixeira, J.P.
dc.contributor.authorMonteiro, M.
dc.contributor.authorRibeiro, E.F.M.
dc.contributor.authorVilão, R.C.
dc.contributor.authorAlberto, H.V.
dc.contributor.authorCunha, J.M.V.
dc.contributor.authorLopes, T.S.
dc.contributor.authorOliveira, K.
dc.contributor.authorDonzel-Gargand, O.
dc.contributor.authorHultqvist, A.
dc.contributor.authorCalderon, S.
dc.contributor.authorBarreiros, M.A.
dc.contributor.authorChiappim, W.
dc.contributor.authorLeitão, J.P.
dc.contributor.authorSilva, A.G.
dc.contributor.authorProkscha, T.
dc.contributor.authorVinhais, C.
dc.contributor.authorFernandes, P.A.
dc.contributor.authorSalomé, P.M.P.
dc.date.accessioned2021-09-24T09:10:27Z
dc.date.available2021-09-24T09:10:27Z
dc.date.issued2020
dc.description.abstractIn the past years, the strategies used to break the Cu(In,Ga)Se2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the structural, morphological and optoelectronic impact of an Al2O3 layer as a potential front passivation layer on the CIGS properties, as well as an Al2O3 tunneling layer between CIGS and CdS. Morphological and structural analyses reveal that the use of Al2O3 alone is not detrimental to CIGS, although it does not resist to the CdS chemical bath deposition. The CIGS optoelectronic properties degrade when the CdS is deposited on top of Al2O3. Nonetheless, when Al2O3 is used alone, the optoelectronic measurements reveal a positive impact of this inclusion such as a very low concentration of interface defects while keeping the same CIGS recombination channels. Thus, we suggest that an Al2O3 front passivation layer can be successfully used with alternative buffer layers. Depth-resolved microscopic analysis of the CIGS interface with slow-muons strongly suggests for the first time that low-energy muon spin spectroscopy (LE-µSR) is sensitive to both charge carrier separation and bulk recombination in complex semiconductors. The demonstration that Al2O3 has the potential to be used as a front passivation layer is of significant importance, considering that Al2O3 has been widely studied as rear interface passivation material.pt_PT
dc.description.sponsorshipThis work was supported in part by NovaCell (028075) and InovSolarCells (029696) and in part by Fundação para a Ciência e a Tecnologia and the ERDF through COMPETE2020. Fundação para a Ciência e a Tecnologia (FCT) is further acknowledged through IF/00133/2015, PD/BD/142780/2018 and SFRH/BD/146776/2019. The European Union's Horizon 2020 research and innovation programme ARCIGS-M project (Grant agreement 720887) is also acknowledged. The financial support by National Funds through the FCT - Fundação para a Ciência e a Tecnologia, I.P., under the scope of the projects UIDB/50025/2020 and UIDP/50025/2020 – Programático, are acknowledged. W. C. thanks the individual grant financed by the SusPhotoSolutions project CENTRO-01-0145-FEDER-000005. P. A. Fernandes would like to acknowledge FCT for the support of the project FCT UIDB/04730/2020. This work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and from FCT [Fundação para a Ciência e Tecnologia (Portugal)] under Projects No. UID/FIS/04564/2016 and No. PTDC/FIS-MAC/29696/2017. The muon experiments were performed at the Swiss Muon Source SµS, Paul Scherrer Institute, Villigen, Switzerland. The authors would like to thanks to Dr. Guy Brammertz for the helping in the interpretation of the TRPL data.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.1016/j.apmt.2020.100867pt_PT
dc.identifier.issn2352-9407
dc.identifier.urihttp://hdl.handle.net/10400.22/18533
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherElsevierpt_PT
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S2352940720303152pt_PT
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/pt_PT
dc.subjectSurface passivationpt_PT
dc.subjectAl2O3pt_PT
dc.subjectCu(In,Ga)Se2 (CIGS)pt_PT
dc.subjectThin film solar cellspt_PT
dc.subjectAtomic layer deposition (ALD)pt_PT
dc.titleFront passivation of Cu(In,Ga)Se2 solar cells using Al2O3: Culprits and benefitspt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/PRAXIS XXI/3402/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/POR_CENTRO/70908/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/OE/75194/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/157685/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/157982/PT
oaire.citation.startPage100867pt_PT
oaire.citation.titleApplied Materials Todaypt_PT
oaire.citation.volume21pt_PT
oaire.fundingStreamPRAXIS XXI
oaire.fundingStreamPOR_CENTRO
oaire.fundingStreamOE
oaire.fundingStream6817 - DCRRNI ID
oaire.fundingStream6817 - DCRRNI ID
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project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
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