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Effect of selenization conditions on the growth and properties of Cu2ZnSn(S,Se)4 thin films

2015Journal article Open access
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dc.contributor.authorRanjbar, Samaneh
dc.contributor.authorRajesh Menon, M.R.
dc.contributor.authorFernandes, P.A.
dc.contributor.authorCunha, A.F. da
dc.date.accessioned2016-01-22T13:03:53Z
dc.date.available2016-01-22T13:03:53Z
dc.date.issued2015
dc.description.abstractThe opto-electronic properties of copper zinc tin sulfide can be tuned to achieve better cell efficiencies by controlled incorporation of selenium. In this paper we report the growth of Cu2ZnSn(S,Se)4 (CZTSSe) using a hybrid process involving the sequential evaporation of Zn and sputtering of the sulfide precursors of Cu and Sn, followed by a selenization step. Two approaches for selenization were followed, one using a tubular furnace and the other using a rapid thermal processor. The effects of annealing conditions on the morphological and structural properties of the films were investigated. Scanning electron microscopy and energy dispersive spectroscopy were employed to investigate the morphology and composition of the films. Structural analyses were done using X-ray diffraction (XRD) and Raman spectroscopy. Structural analyses revealed the formation of CZTSSe. This study shows that regardless of the selenization method a temperature above 450 °C is required for conversion of precursors to a compact CZTSSe layer. XRD and Raman analysis suggests that the films selenized in the tubular furnace are selenium rich whereas the samples selenized in the rapid thermal processor have higher sulfur content.pt_PT
dc.identifier.doi10.1016/j.tsf.2014.11.044pt_PT
dc.identifier.urihttp://hdl.handle.net/10400.22/7470
dc.language.isoengpt_PT
dc.publisherElsevierpt_PT
dc.relation.ispartofseriesThin Solid Films;582
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S004060901401164Xpt_PT
dc.subjectCZTSSe thin filmpt_PT
dc.subjectTubular furnacept_PT
dc.subjectRapid Thermal Processorpt_PT
dc.subjectCopper zinc tin sulfoselenidept_PT
dc.titleEffect of selenization conditions on the growth and properties of Cu2ZnSn(S,Se)4 thin filmspt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage192pt_PT
oaire.citation.startPage188pt_PT
oaire.citation.titleThin Solid Filmspt_PT
oaire.citation.volume582pt_PT
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT

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