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Orientador(es)
Resumo(s)
Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV,
respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both
compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has
already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin
films were grown in order to study its structure and to establish the best growth precursors. SEM
micrographs reveal an open columnar structure for most samples and EDS composition profiling of the
cross sections show different selenium gradients. X-ray diffractograms show different shifts of the
kesterite/stannite (1 1 2) peak, which indicate the presence of CZTSSe. From Raman scattering analysis,
it was concluded that all samples had traces of CZTS and CZTSSe. The composition of the CZTSSe layer
was estimated using X-ray diffraction and Raman scattering and both results were compared. It was
concluded that Se diffused more easily in precursors with ternary Cu–Sn–S phases and metallic Zn than
in precursors with ZnS and/or CZTS already formed. It was also showed that a combination of X-ray
diffraction and Raman scattering can be used to estimate the ratio of S per Se in CZTSSe samples.
Descrição
Palavras-chave
Cu2ZnSnSe4 (CZTSe) Cu2ZnSnS4 (CZTS) Cu2ZnSn(S,Se)4 (CZTSSe) Thin film solar cells Kesterites Chalcogenides
Contexto Educativo
Citação
Editora
Elsevier