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A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells

2019Journal article Restricted access
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dc.contributor.authorBose, S.
dc.contributor.authorCunha, J.M.V.
dc.contributor.authorBorme, J.
dc.contributor.authorChen, W.C.
dc.contributor.authorNilsson, N.S.
dc.contributor.authorTeixeira, J.P.
dc.contributor.authorGaspar, J.
dc.contributor.authorLeitão, J.P.
dc.contributor.authorEdoff, M.
dc.contributor.authorFernandes, P. A.
dc.contributor.authorSalomé, P.M.P.
dc.date.accessioned2021-02-25T16:06:59Z
dc.date.embargo2120
dc.date.issued2019
dc.description.abstractThe effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1% while for passivated cells values reached 9.5%. Electronic properties of passivated cells have been studied before, but the influence of growing the CIGS on Al2O3 with point contacts was still unknown from a structural and morphological point of view. Scanning Electron Microscopy, X-ray Diffraction and Raman spectroscopy measurements were performed. These measurements revealed no significant morphological or structural differences in the CIGS layer for the passivated samples compared with reference samples. These results are in agreement with the similar values of carrier density (~8 × 1016 cm-3) and depletion region (~160 nm) extracted using electrical measurements. A detailed comparison between both sample types in terms of current-voltage, external quantum efficiency and photoluminescence measurements show very different optoelectronic behaviour which is indicative of a successful passivation. SCAPS simulations are done to explain the observed results in view of passivation of the rear interface.pt_PT
dc.description.sponsorshipP.M.P. Salomé acknowledges the funding of Fundação para a Ciência e a Tecnologia (FCT) through the project IF/00133/2015. The European Union's Horizon 2020 research and innovation programme ARCIGS-M project (grant agreement no. 720887) is acknowledged. J. M. V. Cunha acknowledges the funding of Fundação para a Ciência e a Tecnologia (FCT) through the project PD/BD/142780/2018. J. P. Teixeira and J. P. Leitão acknowledge the funding of FCT through the project UID/CTM/50025/2013.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.1016/j.tsf.2018.12.028pt_PT
dc.identifier.urihttp://hdl.handle.net/10400.22/17159
dc.language.isoengpt_PT
dc.publisherElsevierpt_PT
dc.relationIF/00133/2015pt_PT
dc.relationIndustrial relevant electrical passivation of thin films solar cell interfaces
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S004060901830837X?via%3Dihub#!pt_PT
dc.subjectPassivationpt_PT
dc.subjectCopper indium gallium di-selenidept_PT
dc.subjectSolar cellspt_PT
dc.subjectUltrathinpt_PT
dc.subjectAbsorberpt_PT
dc.subjectThin filmpt_PT
dc.titleA morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cellspt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleIndustrial relevant electrical passivation of thin films solar cell interfaces
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/POR_CENTRO/PD%2FBD%2F142780%2F2018/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876/UID%2FCTM%2F50025%2F2013/PT
oaire.citation.endPage84pt_PT
oaire.citation.startPage77pt_PT
oaire.citation.titleThin Solid Filmspt_PT
oaire.citation.volume671pt_PT
oaire.fundingStreamPOR_CENTRO
oaire.fundingStream5876
person.familyNameFernandes
person.givenNamePaulo
person.identifier.orcid0000-0002-1860-7797
person.identifier.ridJ-5264-2013
person.identifier.scopus-author-id35568397500
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsclosedAccesspt_PT
rcaap.typearticlept_PT
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