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Hopping conduction and persistent photoconductivity in Cu2ZnSnS4 thin films

2013Journal article Open access
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dc.contributor.authorGonzález, J. C.
dc.contributor.authorRibeiro, G. M.
dc.contributor.authorViana, E. R.
dc.contributor.authorFernandes, P. A.
dc.contributor.authorSalomé, P. M. P.
dc.contributor.authorGutíerrez, K.
dc.contributor.authorAbelenda, A.
dc.contributor.authorMatinaga, F. M.
dc.contributor.authorLeitão, J. P.
dc.contributor.authorCunha, A. F. da
dc.date.accessioned2014-01-13T15:45:43Z
dc.date.available2014-01-13T15:45:43Z
dc.date.issued2013
dc.description.abstractThe temperature dependence of electrical conductivity and the photoconductivity of polycrystalline Cu2ZnSnS4 were investigated. It was found that at high temperatures the electrical conductivity was dominated by band conduction and nearest-neighbour hopping. However, at lower temperatures, both Mott variable-range hopping (VRH) and Efros–Shklovskii VRH were observed. The analysis of electrical transport showed high doping levels and a large compensation ratio, demonstrating large degree of disorder in Cu2ZnSnS4. Photoconductivity studies showed the presence of a persistent photoconductivity effect with decay time increasing with temperature, due to the presence of random local potential fluctuations in the Cu2ZnSnS4 thin film. These random local potential fluctuations cannot be attributed to grain boundaries but to the large disorder in Cu2ZnSnS4.por
dc.identifier.doi10.1088/0022-3727/46/15/155107pt_PT
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/10400.22/3314
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherIOP Sciencepor
dc.relation.ispartofseriesJournal of Physics D: Applied Physics; Vol. 46, Issue 15
dc.relation.publisherversionhttp://iopscience.iop.org/0022-3727/46/15/155107por
dc.titleHopping conduction and persistent photoconductivity in Cu2ZnSnS4 thin filmspor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.issueIssue 15
oaire.citation.startPage155107por
oaire.citation.titleJournal of Physics D: Applied Physicspor
oaire.citation.volumeVol. 46por
rcaap.rightsopenAccesspor
rcaap.typearticlepor

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