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Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors

2019Journal article Restricted access
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dc.contributor.authorFernandes, P. A.
dc.contributor.authorShongalova, A.
dc.contributor.authorCunha, A.F.
dc.contributor.authorTeixeira, J.P.
dc.contributor.authorLeitão, J.P.
dc.contributor.authorCunha, J.M.V.
dc.contributor.authorBose, S.
dc.contributor.authorSalomé, P.M.P.
dc.contributor.authorCorreia, M.R.
dc.date.accessioned2021-02-25T15:27:14Z
dc.date.embargo2120
dc.date.issued2019
dc.description.abstractIn this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation temperature in the chalcogenization process. It is shown that for a sulphur evaporation temperature of 140 ∘C the predominant phase is Cu12Sb4S13 while for 180 ∘C the predominant phase is Cu3SbS4. In order to ensure precursor composition homogeneity, the Cu-Sb metallic precursors are deposited simultaneously by RF magnetron sputtering using adjustable segmented targets. The morphological characterization of the films was made by scanning electron microscopy and the composition was analysed by energy dispersive spectroscopy. The structural analysis and phase identification were performed by X-ray diffraction and Raman scattering. The optical properties were studied on films deposited directly on bare glass and the optical bandgap energies of 1.47 eV and 0.89 eV for Cu12Sb4S13 and Cu3SbS4, respectively, were determined.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.1016/j.jallcom.2019.05.149pt_PT
dc.identifier.urihttp://hdl.handle.net/10400.22/17154
dc.language.isoengpt_PT
dc.publisherElsevierpt_PT
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0925838819318237?via%3Dihub#!pt_PT
dc.subjectSulfosaltpt_PT
dc.subjectThin filmspt_PT
dc.subjectRF magnetron sputteringpt_PT
dc.subjectChalcogenizationpt_PT
dc.titlePhase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursorspt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage1366pt_PT
oaire.citation.startPage1359pt_PT
oaire.citation.titleJournal of Alloys and Compoundspt_PT
oaire.citation.volume797pt_PT
person.familyNameFernandes
person.givenNamePaulo
person.identifier.orcid0000-0002-1860-7797
person.identifier.ridJ-5264-2013
person.identifier.scopus-author-id35568397500
rcaap.rightsclosedAccesspt_PT
rcaap.typearticlept_PT
relation.isAuthorOfPublication75281af2-3dd9-4a53-a2eb-07de6b8e8ba4
relation.isAuthorOfPublication.latestForDiscovery75281af2-3dd9-4a53-a2eb-07de6b8e8ba4

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