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Orientador(es)
Resumo(s)
In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe
is successful and reproducible. The properties of the best CTZSe thin films grown by this method were
examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements,
photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the
photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around
1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type
conductivity with the hot point probe. The different characterization techniques show that we could grow
single phase CZTSe thin films with our optimized process conditions.
Descrição
Palavras-chave
Cu2ZnSnSe4 CZTSe Selenization Thin films Chalcogenides Solar cell absorber
Contexto Educativo
Citação
Editora
Elsevier