Growth pressure dependence of Cu2ZnSnSe4 properties

Salomé, P. M. P.; Fernandes, P. A.; Cunha, A. F. da; Leitão, J. P.; Malaquias, J.; Weber, A.; González, J. C.; Silva, M. I. N. da

http://hdl.handle.net/10400.22/3386

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In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions.