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Comparison of antimony selenide thin films obtained by electrochemical deposition and selenization of a metal precursor

dc.contributor.authorShongalova, Aigul
dc.contributor.authorAitzhanov, Madi
dc.contributor.authorZhantuarov, Sultan
dc.contributor.authorUrazov, Kazhmukhan
dc.contributor.authorFernandes, Paulo
dc.contributor.authorTokmoldin, Nurlan
dc.contributor.authorCorreia, Maria Rosário
dc.date.accessioned2021-04-22T10:51:49Z
dc.date.embargo2100
dc.date.issued2020
dc.description.abstractIn this work, we present a study comparing two methods of Sb2Se3 deposition, namely electrochemical deposition and selenization of a thin-film metallic Sb – precursor deposited by magnetron sputtering. The Sb selenization process was carried out in the range of temperatures from 270 ºC to 350 ºC in an argon atmosphere enriched with elemental Se vapor. Electrochemical deposition of Sb2Se3 was performed in a three-electrode cell at constant potential. Following electrochemical deposition, the samples were annealed in argon at temperatures ranging from 270 ºC to 350 ºC. Characterization of the obtained thin films was performed using X-ray diffraction, Raman spectroscopy and optical transmission. Both deposition methods demonstrate successful emergence of the selenide phase, albeit with the presence of varying levels of antimony oxide. The possibility of preferential growth was observed, which is suggested as dependent on growth method and annealing temperature.pt_PT
dc.description.sponsorshipThe results were comprehended and processed with the support of the Ministry of Education of Science of Kazakhstan within purpose-oriented program IRN BR05236404 and grant project AP05133651. Raman spectroscopy and XRD results were obtained at the Open-Type National Nanotechnology Laboratory of al-Farabi Kazakh National University. M. Rosário Correia and Paulo Fernandes thank the funding by FEDER funds through the COMPETE 2020 Programme and National Funds through Portuguese Foundation for Science and Technology under the projects UID/CTM/50025/2019.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.1016/j.matpr.2019.11.291pt_PT
dc.identifier.urihttp://hdl.handle.net/10400.22/17864
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherElsevierpt_PT
dc.relationIRN BR05236404pt_PT
dc.relationAP05133651pt_PT
dc.relationInstitute of Nanostructures, Nanomodelling and Nanofabrication
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S221478531933977X?via%3Dihub#!pt_PT
dc.subjectAntimony selenidept_PT
dc.subjectElectrochemical depositionpt_PT
dc.subjectRF magnetron sputteringpt_PT
dc.subjectAnnealing Selenizationpt_PT
dc.titleComparison of antimony selenide thin films obtained by electrochemical deposition and selenization of a metal precursorpt_PT
dc.typeconference object
dspace.entity.typePublication
oaire.awardTitleInstitute of Nanostructures, Nanomodelling and Nanofabrication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F50025%2F2019/PT
oaire.citation.endPage82pt_PT
oaire.citation.startPage77pt_PT
oaire.citation.titleMaterials Today: Proceedingspt_PT
oaire.citation.volume25pt_PT
oaire.fundingStream6817 - DCRRNI ID
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsclosedAccesspt_PT
rcaap.typeconferenceObjectpt_PT
relation.isProjectOfPublicationfeb26529-3779-47b5-a702-133583fec049
relation.isProjectOfPublication.latestForDiscoveryfeb26529-3779-47b5-a702-133583fec049

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