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Advisor(s)
Abstract(s)
Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a
high absorption coefficient, 104 to 105 cm-1, and is being
seen as a possible replacement for Cu(In,Ga)Se2 in thin
film solar cells. Yet, there are some fundamental properties
of CZTSe that are not well known, one of them is its
band gap. In order to resolve its correct value it is necessary
to improve the growth conditions to ensure that single
phase crystalline thin films are obtained. One of the
problems encountered when growing CZTSe is the loss
of Sn through evaporation of SnSe. Stoichiometric films
are then difficult to obtain and usually there are other
phases present. One possible way to overcome this problem
is to increase the pressure of growth of CZTSe. This
can be done by introducing an atmosphere of an inert gas
like Ar or N2. In this work we report the results of morphological,
structural and optical studies of the properties
of CZTSe thin films grown by selenization of DC magnetron
sputtered metallic layers under different Ar pressures.
The films are analysed by SEM/EDS, Raman scattering
and XRD.