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- Over 100 mV VOC improvement for rear passivated ACIGS ultra‐thin solar cellsPublication . Oliveira, Antonio; Rocha Curado, Marco; Teixeira, J. P.; Tomé, Daniela; Çaha, Ihsan; Oliveira, Kevin; Lopes, Tomás; Monteiro, Margarida; Violas, André; Correira, Maria; Fernandes, Paulo; Deepak, Francis; Edoff, Marika; Salomé, PedroA decentralized energy system requires photovoltaic solutions to meet new aesthetic paradigms, such as lightness, flexibility, and new form factors. Notwithstanding, the materials shortage in the Green Transition is a concern gaining momentum due to their foreseen continuous demand. A fruitful strategy to shrink the absorber thickness, meeting aesthetic and shortage materials consumption targets, arises from interface passivation. However, a deep understanding of passivated systems is required to close the efficiency gap between ultra-thin and thin film devices, and to mono-Si. Herein, a (Ag,Cu)(In,Ga)Se2 ultra-thin solar cell, with 92% passivated rear interface area, is compared with a conventional nonpassivated counterpart. A thin MoSe2 layer, for a quasi-ohmic contact, is present in the two architectures at the contacts, despite the passivated device narrow line scheme. The devices present striking differences in charge carrier dynamics. Electrical and optoelectronic analysis combined with SCAPS modelling suggest a lower recombination rate for the passivated device, through a reduction on the rear surface recombination velocity and overall defects, comparing with the reference solar cell. The new architecture allows for a 2% efficiency improvement on a 640 nm ultra-thin device, from 11% to 13%, stemming from an open circuit voltage increase of 108 mV.
- Encapsulation of Nanostructures in a Dielectric Matrix Providing Optical Enhancement in Ultrathin Solar CellsPublication . Oliveira, Antonio; de Wild, Jessica; Oliveira, Kevin; Valença, Beatriz A.; Guerreiro, Joana Rafaela; Abalde-Cela, Sara; Lopes, Tomás; Ribeiro, Rodrigo M.; Cunha, José Miguel; M.C.Alberto; Monteiro, Margarida; Violas, André; Silva, Ana Gomes; Prado, Marta; Fernandes, P. A.; Vermang, Bart; Salomé, P. M. P.The incorporation of nanostructures in optoelectronic devices for enhancing their optical performance is widely studied. However, several problems related to the processing complexity and the low performance of the nanostructures have hindered such actions in real-life devices. Herein, a novel way of introducing gold nanoparticles in a solar cell structure is proposed in which the nanostructures are encapsulated with a dielectric layer, shielding them from high temperatures and harsh growth processing conditions of the remaining device. Through optical simulations, an enhancement of the effective optical path length of approximately four times the nominal thickness of the absorber layer is verified with the new architecture. Furthermore, the proposed concept in a Cu(In,Ga)Se2 solar cell device is demonstrated, where the short-circuit current density is increased by 17.4%. The novel structure presented in this work is achieved by combining a bottom-up chemical approach of depositing the nanostructures with a top-down photolithographic process, which allows for an electrical contact.