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Advisor(s)
Abstract(s)
In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS)
based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu
precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning
electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority
carrier type was identified via a hot point probe analysis. The hole density, space charge region width and
band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that
formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the
following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit
voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an
efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.
Description
Keywords
Cu2ZnSnS4 CZTS Sputtering Sulphurization Thin film Solar cell Raman