Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.22/3423
Título: Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers
Autor: Malaquias, J.
Fernandes, P. A.
Salomé, P. M. P.
Cunha, A. F. da
Palavras-chave: Tin sulphide
Sulphurization
Thin film
Solar cell
Data: 2011
Editora: Elsevier
Relatório da Série N.º: Thin Solid Films; Vol. 519, Issue 21
Resumo: In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.
Peer review: yes
URI: http://hdl.handle.net/10400.22/3423
ISSN: 0040-6090
Versão do Editor: http://www.sciencedirect.com/science/article/pii/S0040609011004615
Aparece nas colecções:ISEP – DFI – Artigos

Ficheiros deste registo:
Ficheiro Descrição TamanhoFormato 
ART_JMalaquias_2011_DFI.pdf307,41 kBAdobe PDFVer/Abrir


FacebookTwitterDeliciousLinkedInDiggGoogle BookmarksMySpace
Formato BibTex MendeleyEndnote Degois 

Todos os registos no repositório estão protegidos por leis de copyright, com todos os direitos reservados.