Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.22/3314
Título: Hopping conduction and persistent photoconductivity in Cu2ZnSnS4 thin films
Autor: González, J. C.
Ribeiro, G. M.
Viana, E. R.
Fernandes, P. A.
Salomé, P. M. P.
Gutíerrez, K.
Abelenda, A.
Matinaga, F. M.
Leitão, J. P.
Cunha, A. F. da
Data: 2013
Editora: IOP Science
Relatório da Série N.º: Journal of Physics D: Applied Physics; Vol. 46, Issue 15
Resumo: The temperature dependence of electrical conductivity and the photoconductivity of polycrystalline Cu2ZnSnS4 were investigated. It was found that at high temperatures the electrical conductivity was dominated by band conduction and nearest-neighbour hopping. However, at lower temperatures, both Mott variable-range hopping (VRH) and Efros–Shklovskii VRH were observed. The analysis of electrical transport showed high doping levels and a large compensation ratio, demonstrating large degree of disorder in Cu2ZnSnS4. Photoconductivity studies showed the presence of a persistent photoconductivity effect with decay time increasing with temperature, due to the presence of random local potential fluctuations in the Cu2ZnSnS4 thin film. These random local potential fluctuations cannot be attributed to grain boundaries but to the large disorder in Cu2ZnSnS4.
Peer review: yes
URI: http://hdl.handle.net/10400.22/3314
ISSN: 0022-3727
Versão do Editor: http://iopscience.iop.org/0022-3727/46/15/155107
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