Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.22/3298
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dc.contributor.authorFernandes, P. A.-
dc.contributor.authorSalomé, P. M. P.-
dc.contributor.authorSartori, A. F.-
dc.contributor.authorMalaquias, J.-
dc.contributor.authorCunha, A. F. da-
dc.contributor.authorSchubert, Björn-Arvid-
dc.contributor.authorGonzález, J. C.-
dc.contributor.authorRibeiro, G. M.-
dc.date.accessioned2014-01-13T12:34:55Z-
dc.date.available2014-01-13T12:34:55Z-
dc.date.issued2013-
dc.identifierhttp://dx.doi.org/10.1016/j.solmat.2013.03.032-
dc.identifier.issn0927-0248-
dc.identifier.urihttp://hdl.handle.net/10400.22/3298-
dc.description.abstractWe report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered tackedmetallic precursors. Three different time intervals, 10 min, 30min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analyzed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54meV for increasing sulphurization time from 10min to 60min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott–Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0 1017 cm−3 to 6.5 1015 cm−3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. These results also show an increase of the depletion region width from approximately 90 nm–250 nm.por
dc.language.isoengpor
dc.publisherElsevier-
dc.relation.ispartofseriesSolar Energy Materials and Solar Cells; Vol. 115-
dc.rightsopenAccesspor
dc.subjectCu2ZnSnS4por
dc.subjectCZTSpor
dc.subjectAbsorberpor
dc.subjectSulphurizationpor
dc.subjectThin filmpor
dc.subjectSolar cellpor
dc.titleEffects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursorspor
dc.typearticlepor
dc.peerreviewedyespor
degois.publication.firstPage157por
degois.publication.lastPage165por
degois.publication.titleSolar Energy Materials and Solar Cells-
degois.publication.volumeVol. 115por
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0927024813001451por
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